Role of low-temperature (200 °C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxy

Authors: Namkoong G., Doolittle W.A., Brown A.S., Losurdo M., Capezzuto P., Bruno G.
Years: 2002
Source Title:
Doi: 10.1116/1.1470514
Venue: NanoChem @ URT Bari