Role of gate oxide thickness in controlling short channel effects in polycrystalline silicon thin film transistors

Authors: Valletta A., Gaucci P., Mariucci L., Pecora A., Cuscun M., Maiolo L., Fortunato G., Brotherton S.D.
Years: 2009
Source Title: Applied Physics Letters
Doi: 10.1063/1.3177196
Venue: CNR Nanotec @ Lecce