Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy

Authors: Losurdo M., Giangregorio M.M., Bruno G., Kim T.-H., Wu P., Choi S., Brown A., Masia F., Capizzi M., Polimeni A.
Years: 2007
Source Title:
Doi: 10.1063/1.2424664
Venue: NanoChem @ URT Bari