The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE

Authors: Brown A.S., Losurdo M., Kim T.H., Giangregorio M.M., Choi S., Morse M., Wu P., Capezzuto P., Bruno G.
Years: 2005
Source Title:
Doi: 10.1002/crat.200410475
Venue: NanoChem @ URT Bari