Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers

Authors: Losurdo M., Capezzuto P., Bruno G., Namkoong G., Doolittle W.A., Brown A.S.
Years: 2002
Source Title:
Doi: 10.1063/1.1435835
Venue: NanoChem @ URT Bari