Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics

Authors: Namkoong G., Doolittle W.A., Brown A.S., Losurdo M., Capezzuto P., Bruno G.
Years: 2002
Source Title:
Doi: 10.1063/1.1435834
Venue: NanoChem @ URT Bari