Role of field enhanced mechanisms and impact ionization on the threshold voltage of short channel polycrystalline silicon thin film transistors

Authors: Gaucci P., Valletta A., Mariucci L., Pecora A., Cuscun M., Maiolo L., Fortunato G.
Years: 2008
Source Title: Applied Physics Letters
Doi: 10.1063/1.3027478
Venue: CNR Nanotec @ Lecce