Remote plasma assisted MOCVD growth of GaN on 4H-SiC: Growth mode characterization exploiting ellipsometry

Authors: Losurdo M., Giangregorio M.M., Capezzuto P., Bruno G., Kim T.-H., Choi S., Brown A.
Years: 2005
Source Title:
Doi: 10.1051/epjap:2005056
Venue: NanoChem @ URT Bari