Real time monitoring of the interaction of Si (100) with atomic hydrogen: The h-insertion/Si-etching” kinetic model explaining Si surface modifications””eal time monitoring of the interaction of Si (100) with atomic hydrogen: “

Authors: Bianco G.V., Losurdo M., Giangregorio M.M., Capezzuto P., Bruno G.
Years: 2009
Source Title:
Doi: 10.1063/1.3245312
Venue: NanoChem @ URT Bari