Optical properties of InGaAs QDs grown in a GaAs matrix by MOCVD, emitting at 1300 nm at room temperature

Authors: Todaro M.T., De Giorgi M., Tasco V., DeVittorio M., Passaseo A., Cingolani R.
Years: 2003
Source Title: Materials Research Society Symposium – Proceedings
Doi:
Venue: CNR Nanotec @ Lecce