Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry

Authors: Losurdo M., Bruno G., Kim T.H., Choi S., Brown A., Moto A.
Years: 2005
Source Title:
Doi: 10.1016/j.jcrysgro.2005.07.016
Venue: NanoChem @ URT Bari