Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

Authors: Tasco V., Campa A., Tarantini I., Passaseo A., Gonzalez-Posada F., Redondo-Cubero A., Lorenz K., Franco N., Muoz E.
Years: 2009
Source Title: Journal of Applied Physics
Doi: 10.1063/1.3093700
Venue: CNR Nanotec @ Lecce