Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)

Authors: Losurdo M., Capezzuto P., Bruno G., Brown A., Kim T.-H., Yi C., Zakharov D.N., Liliental-Weber Z.
Years: 2005
Source Title:
Doi: 10.1063/1.1852703
Venue: NanoChem @ URT Bari