Impact of unintentional and intentional nitridation of the 6H-SiC(0001)Si substrate on GaN epitaxy

Authors: Kim T.-H., Choi S., Morse M., Wu P., Yi C., Brown A., Losurdo M., Giangregorio M.M., Bruno G.
Years: 2005
Source Title:
Doi: 10.1116/1.1878997
Venue: NanoChem @ URT Bari