Impact of 4H- And 6H-SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy

Authors: Kim T.-H., Choi S., Brown A.S., Losurdo M., Bruno G.
Years: 2006
Source Title:
Doi: 10.1063/1.2220007
Venue: NanoChem @ URT Bari