High-efficiency 1.3 μm InGaAsGaAs quantum-dot microcavity light-emitting diodes grown by metalorganic chemical vapor deposition

Authors: Todaro M.T., Tasco V., De Giorgi M., Martiradonna L., Raino G., De Vittorio M., Passaseo A., Cingolani R.
Years: 2005
Source Title: Applied Physics Letters
Doi: 10.1063/1.1898440
Venue: CNR Nanotec @ Lecce