Gallium arsenide passivation method for the employment of High Electron Mobility Transistors in liquid environment

Authors: Sileo L., Martiradonna L., Brunetti V., Tasco V., De Vittorio M.
Years: 2012
Source Title: Microelectronic Engineering
Doi: 10.1016/j.mee.2012.05.038
Venue: CNR Nanotec @ Lecce