Electroluminescence and transmission electron microscopy characterization of reverse-biased AlGaN/GaN devices

Authors: Cullen D.A., Smith D.J., Passaseo A., Tasco V., Stocco A., Meneghini M., Meneghesso G., Zanoni E.
Years: 2013
Source Title: IEEE Transactions on Device and Materials Reliability
Doi: 10.1109/TDMR.2012.2221464
Venue: CNR Nanotec @ Lecce