Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation

Authors: Losurdo M., Giangregorio M.M., Bruno G., Kim T.-H., Choi S., Brown A.
Years: 2006
Source Title:
Doi: 10.1002/pssa.200565154
Venue: NanoChem @ URT Bari