Analysis of Electrical Characteristics of Gate Overlapped Lightly Doped Drain (GOLDD) Polysilicon Thin-Film Transistors With Different LDD Doping Concentration

Authors: Bonfiglietti A., Cuscuna M., Valletta A., Mariucci L., Pecora A., Fortunato G., Brotherton S.D., Ayres J.R.
Years: 2003
Source Title: IEEE Transactions on Electron Devices
Doi: 10.1109/TED.2003.819250
Venue: CNR Nanotec @ Lecce