A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVD

Authors: Losurdo M., Giangregorio M., Grimaldi A., Capezzuto P., Bruno G.
Years: 2004
Source Title:
Doi: 10.1051/epjap:2004032
Venue: NanoChem @ URT Bari